IDiyas

For the Inventor, By the Inventor

Singapore, Singapore

Jian Xun Li

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 112(Granted Patents)


Company Filing History:

goldMedal14 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 1999-2007

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):
1. 7238971 - Self-aligned lateral heterojunction bipolar transistor (2007-07-03),
2. 7049201 - Method and apparatus for a heterojunction bipolar transistor using self-aligned epitaxy (2006-05-23),
3. 7022578 - Heterojunction bipolar transistor using reverse emitter window (2006-04-04),
4. 6972237 - Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth (2005-12-06),
5. 6924202 - Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact (2005-08-02),
6. 6908824 - Self-aligned lateral heterojunction bipolar transistor (2005-06-21),
7. 6709918 - Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology (2004-03-23),
8. 6534393 - Method for fabricating local metal interconnections with low contact resistance and gate electrodes with improved electrical conductivity (2003-03-18),
9. 6524963 - Method to improve etching of organic-based, low dielectric constant materials (2003-02-25),
10. 6489191 - Method for forming self-aligned channel implants using a gate poly reverse mask (2002-12-03),
11. 6410394 - Method for forming self-aligned channel implants using a gate poly reverse mask (2002-06-25),
12. 6395631 - Low dielectric constant dielectric layer fabrication method employing hard mask layer delamination (2002-05-28),
13. 6140206 - Method to form shallow trench isolation structures (2000-10-31),
14. 5948701 - Self-aligned contact (SAC) etching using polymer-building chemistry (1999-09-07),
15. 5930627 - Process improvements in self-aligned polysilicon MOSFET technology using (1999-07-27),

Title: Discovering the Innovations of Inventor Jian Xun Li

Introduction

Jian Xun Li is a remarkable inventor based in Singapore, boasting an impressive portfolio of 15 patents. His contributions to the field of semiconductor technology have paved the way for advanced electronic devices and systems. His innovations center on the development of heterojunction bipolar transistors, which are vital components in modern electronics.

Latest Patents

Jian Xun Li's recent patents include groundbreaking technologies such as the **Self-aligned lateral heterojunction bipolar transistor**. This patent describes a sophisticated design comprising a semiconductor substrate with an insulating layer, which enhances the performance and reliability of lateral heterojunction bipolar transistors (HBTs). The design incorporates advanced features like a semiconductive layer that forms a collector structure and an emitter structure in contact with respective layers, utilizing a compound semiconductive material that may include silicon-germanium variants.

Another significant patent by Jian Xun Li is the **Method and apparatus for a heterojunction bipolar transistor using self-aligned epitaxy**. This innovation outlines a method for manufacturing HBTs that incorporates an advanced base structure within a base cavity, allowing for efficient connectivity between the base, emitter, and collector regions. The integration of these elements in a single processing chamber reflects the cutting-edge practices in semiconductor fabrication.

Career Highlights

Throughout his career, Jian Xun Li has significantly contributed to the semiconductor industry. He has worked with Chartered Semiconductor Manufacturing Ltd, a prominent corporation known for its innovation in semiconductor technology. His experience within such leading companies underscores his valuable expertise and insights into the evolving landscape of electronics.

Collaborations

Jian Xun Li has collaborated with notable colleagues, including Shao-fu Sanford Chu and Purakh Raj Verma. These partnerships highlight the collective effort in advancing technologies that drive the semiconductor field forward. Their collaborative work likely reflects a synergy of knowledge and skills aimed at pushing the boundaries of current technology.

Conclusion

Jian Xun Li stands out as a prolific inventor with a strong record of patents that reflect his commitment to innovation in semiconductor technology. His latest advancements in heterojunction bipolar transistors showcase his ability to lead in the design and manufacturing of essential components for modern electronic devices. As the industry continues to evolve, Jian Xun Li’s contributions promise to play a pivotal role in shaping the future of electronics.

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