The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Dec. 01, 2003
Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
Purakh Raj Verma, Singapore, SG;
Shao-fu Sanford Chu, Singapore, SG;
Lap Chan, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Jian Xun LI, Singapore, SG;
Purakh Raj Verma, Singapore, SG;
Shao-fu Sanford Chu, Singapore, SG;
Lap Chan, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Jian Xun Li, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for manufacturing a heterojunction bipolar transistor is provided. An intrinsic collector structure is formed on a substrate. An extrinsic base structure partially overlaps the intrinsic collector structure. An intrinsic base structure is formed adjacent the intrinsic collector structure and under the extrinsic base structure. An emitter structure is formed adjacent the intrinsic base structure. An extrinsic collector structure is formed adjacent the intrinsic collector structure. A plurality of contacts is formed through an interlevel dielectric layer to the extrinsic collector structure, the extrinsic base structure, and the emitter structure.