The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Oct. 09, 2003
Jian Xun LI, Singapore, SG;
Lap Chan, Singapore, SG;
Purakh Raj Verma, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Shao-fu Sanford Chu, Singapore, SG;
Jian Xun Li, Singapore, SG;
Lap Chan, Singapore, SG;
Purakh Raj Verma, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Shao-fu Sanford Chu, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
A heterojunction bipolar transistor (HBT), and manufacturing method therfor, comprising a semiconductor substrate having a collector region is provided. A base contact layer is formed over the collector region, and a base trench is formed in the base contact layer and the collector region. An intrinsic base structure having a sidewall portion and a bottom portion is formed in the base trench. An insulating spacer is formed over the sidewall portion of the intrinsic base structure, and an emitter structure is formed over the insulating spacer and the bottom portion of the intrinsic base structure. An interlevel dielectric layer is formed over the base contact layer and the emitter structure. Connections are formed through the interlevel dielectric layer to the collector region, the base contact layer, and the emitter structure. The intrinsic base structure is silicon and at least one of silicon-germanium, silicon-germanium-carbon, and combinations thereof.