The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Nov. 06, 2003
Purakh Raj Verma, Singapore, SG;
Shao-fu Sanford Chu, Singapore, SG;
Lap Chan, Singapore, SG;
Jian Xun LI, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Purakh Raj Verma, Singapore, SG;
Shao-Fu Sanford Chu, Singapore, SG;
Lap Chan, Singapore, SG;
Jian Xun Li, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Chartered Semionductor Manufacturing Ltd., Singapore, SG;
Abstract
A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, a number of insulating layers over the semiconductor substrate, at least one of the number of insulating layers having a base cavity over the collector region, a base structure of a compound semiconductive material in the base cavity, a window in the insulating layer over the base cavity, an emitter structure in the window, an interlevel dielectric layer, and connections through the interlevel dielectric layer to the base structure, the emitter structure, and the collector region. The base structure and the emitter structure preferably are formed in the same processing chamber.