The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Oct. 09, 2003
Purakh Raj Verma, Singapore, SG;
Shao-fu Sanford Chu, Singapore, SG;
Lap Chan, Singapore, SG;
Jian Xun LI, Singapore, SG;
Zhen Jia Zheng, Singapore, SG;
Purakh Raj Verma, Singapore, SG;
Shao-fu Sanford Chu, Singapore, SG;
Lap Chan, Singapore, SG;
Jian Xun Li, Singapore, SG;
Zhen Jia Zheng, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A heterojunction bipolar transistor (HBT), and manufacturing method therefor, comprising a semiconductor substrate having a collector region, an intrinsic base region of a compound semiconductive material over the collector region, an extrinsic base region, an emitter structure, an interlevel dielectric layer over the collector region, extrinsic base region and emitter structure, and connections through the interlevel dielectric layer to the base region, the emitter structure, and the collector region. The emitter structure is formed by forming a reverse emitter window over the intrinsic base region, which subsequently is etched to form an emitter window having a multi-layer reverse insulating spacer therein.