The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Nov. 13, 2001
Chit Hwei Ng, Singapore, SG;
Chaw Sing Ho, Singapore, SG;
Other;
Abstract
In one embodiment, the present invention recites forming a number of first openings in a first substrate. The present embodiment then recites forming a copper region within each first openings during a damascene process, wherein each copper region has a top surface. The present embodiment then disposes a dielectric layer proximate to the top surface of each of the first copper regions during the damascene process. After depositing a second substrate over the dielectric, a number of second openings in a second substrate are made. Next, a number of second copper regions are formed in the second openings, during the damascene process. The dielectric region is thus disposed between the first copper regions and the second copper regions. In so doing, the dielectric region forms a dielectric barrier between the first copper regions and the second copper regions such that a metal-insulator-metal (MIM) capacitor is formed during a damascene process.