The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jan. 31, 2014
Applicant:
Hewlett-packard Development Company, L.p., Houston, TX (US);
Inventors:
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/14 (2006.01); B41J 2/175 (2006.01); B41J 2/195 (2006.01); B41J 29/38 (2006.01);
U.S. Cl.
CPC ...
B41J 2/1433 (2013.01); B41J 2/14153 (2013.01); B41J 2/17566 (2013.01); B41J 2/195 (2013.01); B41J 29/38 (2013.01); B41J 2002/14354 (2013.01); B41J 2202/13 (2013.01);
Abstract
Ink property sensing on a printhead is described. In an example, a substrate for a printhead includes a cap layer having bores. Chambers are formed beneath the cap layer in fluidic communication with the bores. Fluid ejectors are disposed in at least a portion of the chambers. At least one ion-sensitive field effect transistor (ISFET) is disposed in a respective at least one of the chambers. An electrode is disposed in each of the chambers having an ISFET and capacitively coupled to said ISFET through a dielectric.