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For the Inventor, By the Inventor

Los Altos, CA, United States of America

Charlie Cheng

This inventor holds 31 USPTO granted patents and 7 published patent applications, primarily in Thyristor Memory Technology. Top assignees: Kilopass Technology, Inc., Tc Lab, Inc., Synopsys, Inc.. Active years: 2016-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Charlie Cheng. Retrieved from https://idiyas.com/inventor/charlie-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 31 

% Patents Active = 32.3

Average Co-Inventor Count = 4.1

ph-index = 6

Forward Citations = 89(Granted Patents)


Company Filing History:

goldMedal19 out of 45 
 
Kilopass Technology, Inc.
 patents
silverMedal11 out of 30 
 
Tc Lab, Inc.
 patents
bronzeMedal1 out of 2,613 
 
Synopsys, Inc.
 patents

Years Active: 2016-2021

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Areas of Expertise:
Thyristor RAM
SRAM Circuits
Data Retention
Memory Architecture
Volatile Memory
Electrical Disturb Effects
Memory Cell Structures
Write Assist
Refresh Methods
Heterostructured Cathodes
One Time Programmable
Power Reduction
31 patents (USPTO):Explore Patents
1. 11114438 - Thyristor volatile random access memory and methods of manufacture (2021-09-07),
2. 10553588 - Thyristor volatile random access memory and methods of manufacture (2020-02-04),
3. 10529718 - Thyristor volatile random access memory and methods of manufacture (2020-01-07),
4. 10460789 - Methods of reading and writing data in a thyristor random access memory (2019-10-29),
5. 10438952 - Method of writing into and refreshing a thyristor volatile random access memory (2019-10-08),
6. 10381063 - Methods of reading and writing data in a thyristor random access memory (2019-08-13),
7. 10332886 - Thyristor volatile random access memory and methods of manufacture (2019-06-25),
8. 10283185 - Write assist thyristor-based SRAM circuits and methods of operation (2019-05-07),
9. 10256241 - Vertical thyristor memory with minority carrier lifetime reduction (2019-04-09),
10. 10090037 - Methods of retaining and refreshing data in a thyristor random access memory (2018-10-02),
11. 10056389 - Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication (2018-08-21),
12. 10032522 - Three-transistor OTP memory cell (2018-07-24),
13. 10020308 - Thyristor memory cell with assist device (2018-07-10),
14. 10020043 - Methods of reading and writing data in a thyristor random access memory (2018-07-10),
15. 9899390 - Methods and systems for reducing electrical disturb effects between thyristor memory cells using heterostructured cathodes (2018-02-20),

Title: The Innovative Mind of Charlie Cheng: A Pioneer in Thyristor Memory Technology

Introduction

Charlie Cheng, based in Los Altos, CA, is an accomplished inventor with a remarkable portfolio of 31 patents. He has made significant contributions to the field of memory technology, particularly through his innovative work on thyristor volatile random access memory (VRAM). Cheng's inventions not only enhance data storage capabilities but also focus on reducing power consumption.

Latest Patents

Among his latest patents, Cheng has developed methods for writing data into a volatile thyristor memory cell array. His patented method includes a refresh mechanism that maintains the data integrity within the cell array. Additionally, he has patented memory cells that are formed with vertical thyristors, which create an efficient volatile memory array. These advancements emphasize power conservation through various encoding techniques employed in the data storage process.

Career Highlights

Cheng's professional journey includes significant roles at leading technology companies such as Kilopass Technology, Inc. and Tc Lab, Inc. His work has consistently pushed the boundaries of memory technologies, making him a key figure in advancing the field of electronic data storage.

Collaborations

Throughout his career, Charlie Cheng has collaborated with notable professionals in the industry, including Harry Luan and Valery Axelrad. These partnerships have enabled him to drive forward innovative solutions in memory technology and leverage diverse expertise to achieve greater outcomes.

Conclusion

Charlie Cheng's contributions to the realm of thyristor volatile random access memory highlight his innovative spirit and technical prowess. With a substantial number of patents to his name, he continues to shape the landscape of data storage technologies while prioritizing efficiency and sustainability. His endeavors serve as an inspiration for aspiring inventors and engineers seeking to make impactful advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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