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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10020308 B1

PDFFull Text
Expired
Date of Patent:
Jul. 10, 2018

Filed:

Nov. 11, 2016

Thyristor memory cell with assist device

Applicant:

Kilopass Technology, Inc., San Jose, CA (US);

Inventors:

Harry Luan, Saratoga, CA (US);

Bruce L. Bateman, Fremont, CA (US);

Valery Axelrad, Woodside, CA (US);

Charlie Cheng, Los Altos, CA (US);

Assignee:

Kilopass Technology, Inc., San Jose, CA (US);

Attorney:

Aka Chan LLP

Primary Examiner:

Victor A Mandala

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/102 (2006.01); H01L 27/105 (2006.01); H01L 29/423 (2006.01); H01L 29/74 (2006.01); G11C 11/39 (2006.01); H01L 27/08 (2006.01); H01L 27/108 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1027 (2013.01); G11C 11/39 (2013.01); H01L 27/0817 (2013.01); H01L 27/1023 (2013.01); H01L 27/1052 (2013.01); H01L 29/42308 (2013.01); H01L 29/74 (2013.01); H01L 27/10805 (2013.01); H01L 27/11 (2013.01);
Abstract

A vertical thyristor memory array including: a vertical thyristor memory cell, the vertical thyristor memory cell including: a p+ anode; an n-base located below the p+ anode; a p-base located below the n-base; a n+ cathode located below the p-base; an isolation trench located around the vertical thyristor memory cell; an assist gate located in the isolation trench adjacent the n-base wherein an entire vertical height of the assist gate is positioned within an entire vertical height of the n-base.

Find Patent Forward Citations

Luan, Harry. (2018). Thyristor memory cell with assist device (U.S. Patent No. 10020308). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10020308

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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