Fremont, CA, United States of America

Bruce Lynn Bateman

USPTO Granted Patents = 65 

Average Co-Inventor Count = 2.2

ph-index = 11

Forward Citations = 398(Granted Patents)

Forward Citations (Not Self Cited) = 329(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Danville, CA (US) (1996)
  • Fremont, CA (US) (2002 - 2023)

Company Filing History:


Years Active: 1996-2023

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Areas of Expertise:
Vertical Cross-Point Arrays
Thyristor Volatile Random Access Memory
3D Memory Array Clusters
Global Bit Line Pre-Charge Circuit
Reduced Current Memory Device
Cross-Coupled Thyristor SRAM
Two-Transistor SRAM
Six-Transistor SRAM
Memory Architecture
Data Transfer Methods
Power Reduction Techniques
65 patents (USPTO):Explore Patents

Title: The Innovative Genius of Bruce Lynn Bateman

Introduction: Bruce Lynn Bateman, a prolific inventor based in Fremont, CA, has made significant contributions to the field of memory architecture and technology. With an impressive portfolio of 65 patents, Bateman's innovations play a crucial role in advancing ultra-high-density memory applications.

Latest Patents: Among Bateman's latest developments are groundbreaking patents that enhance memory technology. One notable innovation is the "Vertical cross-point arrays for ultra-high-density memory applications." This patent describes an ultra-high-density vertical cross-point array, which consists of a series of horizontal line layers interleaved with vertical lines. The design allows for two-terminal memory cells to be formed efficiently, realizing a compact memory cell footprint.

Another significant patent is the "3D memory array clusters and resulting memory architecture," which outlines a 3-dimensional architecture for thyristor memory cell arrays. In this architecture, bit line clusters are configured in a 3D cross-point arrangement, allowing for efficient read and write operations while minimizing power consumption and disturbances in non-selected clusters.

Career Highlights: Bruce Bateman has worked with renowned companies, including Unity Semiconductor Corporation and Kilopass Technology, Inc. Throughout his career, he has consistently pushed the boundaries of memory technology, focusing on innovative solutions that meet the demands of modern computing.

Collaborations: Bateman has collaborated with esteemed colleagues such as Harry Luan and Valery Axelrad, enhancing the drive for innovation within the teams he has been a part of. Their collective efforts have contributed to the advancement of the field and the successful implementation of revolutionary technologies.

Conclusion: Bruce Lynn Bateman stands out as a prominent figure in the realm of memory technology innovation. His numerous patents and collaborations with industry experts reflect a commitment to advancing technology through creative problem-solving. As the landscape of memory applications continues to evolve, Bateman's contributions will undoubtedly leave a lasting impact.

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