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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10529718 B1

PDFFull Text
Date of Patent:
Jan. 07, 2020

Filed:

Jun. 21, 2018

Thyristor volatile random access memory and methods of manufacture

Applicant:

Tc Lab, Inc., Gilroy, CA (US);

Inventors:

Harry Luan, Saratoga, CA (US);

Bruce L. Bateman, Fremont, CA (US);

Valery Axelrad, Woodside, CA (US);

Charlie Cheng, Los Altos, CA (US);

Assignee:

TC Lab, Inc., Gilroy, CA (US);

Attorney:

Aka Chan LLP

Primary Examiner:

Pho M Luu

Int. Cl.
CPC ...
G11C 5/08 (2006.01); H01L 27/102 (2006.01); H01L 29/749 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01); G11C 11/39 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 29/45 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1027 (2013.01); G11C 11/39 (2013.01); H01L 21/28035 (2013.01); H01L 21/321 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 28/00 (2013.01); H01L 29/0649 (2013.01); H01L 29/102 (2013.01); H01L 29/1016 (2013.01); H01L 29/16 (2013.01); H01L 29/45 (2013.01); H01L 29/456 (2013.01); H01L 29/66356 (2013.01); H01L 29/66363 (2013.01); H01L 29/749 (2013.01); H01L 29/0834 (2013.01); H01L 29/4236 (2013.01);
Abstract

Operations with reduced current overall are performed on single thyristor memory cells forming a volatile memory cell cross-point array. A first voltage is applied across a first group of memory cells for the operation and a lower second voltage is applied across other groups of memory cells. The first voltage is then applied across a second group of memory cells while the second voltage is applied across the other groups including the first group of memory cells and repeated until the operations covers all the groups.

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Luan, Harry. (2020). Thyristor volatile random access memory and methods of manufacture (U.S. Patent No. 10529718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10529718

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