The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2019

Filed:

Feb. 07, 2017
Applicant:

Tc Lab, Inc., Gilroy, CA (US);

Inventors:

Harry Luan, Saratoga, CA (US);

Valery Axelrad, Woodside, CA (US);

Charlie Cheng, Los Altos, CA (US);

Assignee:

TC Lab, Inc., Gilroy, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 27/102 (2006.01); H01L 21/285 (2006.01); H01L 21/8229 (2006.01); H01L 23/532 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 21/22 (2006.01); H01L 21/3205 (2006.01); H01L 27/108 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/161 (2006.01); G11C 11/39 (2006.01); H01L 27/08 (2006.01); H01L 29/08 (2006.01); H01L 29/87 (2006.01); H01L 49/02 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1027 (2013.01); G11C 11/39 (2013.01); H01L 21/02271 (2013.01); H01L 21/221 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/28525 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/32053 (2013.01); H01L 21/8229 (2013.01); H01L 23/53209 (2013.01); H01L 23/53242 (2013.01); H01L 27/0817 (2013.01); H01L 27/1023 (2013.01); H01L 27/10802 (2013.01); H01L 28/00 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/0839 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/456 (2013.01); H01L 29/66363 (2013.01); H01L 29/74 (2013.01); H01L 29/87 (2013.01);
Abstract

Apparatus and methods for reducing minority carriers in a memory array are described herein. Minority carriers diffuse between ON cells and OFF cells, causing disturbances during write operation as well as reducing the retention lifetime of the cells. Minority Carrier Lifetime Killer (MCLK) region architectures are described for vertical thyristor memory arrays with insulation trenches. These MCLK regions encourage recombination of minority carriers. In particular, MCLK regions formed by conductors embedded along the cathode line of a thyristor array, as well as dopant MCLK regions are described, as well as methods for manufacturing thyristor memory cells with MCLK regions.


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