The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Dec. 05, 2017
Applicant:
Tc Lab, Inc., Gilroy, CA (US);
Inventors:
Harry Luan, Saratoga, CA (US);
Bruce L. Bateman, Fremont, CA (US);
Valery Axelrad, Woodside, CA (US);
Charlie Cheng, Los Altos, CA (US);
Assignee:
TC Lab, Inc., Gilroy, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/08 (2006.01); H01L 27/102 (2006.01); H01L 29/749 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01); G11C 11/39 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 29/45 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1027 (2013.01); G11C 11/39 (2013.01); H01L 21/28035 (2013.01); H01L 21/321 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 28/00 (2013.01); H01L 29/0649 (2013.01); H01L 29/102 (2013.01); H01L 29/1016 (2013.01); H01L 29/16 (2013.01); H01L 29/45 (2013.01); H01L 29/456 (2013.01); H01L 29/66356 (2013.01); H01L 29/66363 (2013.01); H01L 29/749 (2013.01); H01L 29/0834 (2013.01); H01L 29/4236 (2013.01);
Abstract
Memory cells are formed with vertical thyristors to create a volatile memory array. Power consumption in such arrays is reduced or controlled for an operation on a set of memory cells in an array, sequentially engaging subsets of memory cells for the operation while keeping the remaining memory cells of the set on hold until all the memory cells of the set have been operated on.
Quick Actions:
Luan, Harry. (2019). Thyristor volatile random access memory and methods of manufacture (U.S. Patent No. 10332886). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10332886
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile