IDiyas

For the Inventor, By the Inventor

Zhubei, Taiwan

Chao-Hsien Peng

USPTO Granted Patents = 29 

Average Co-Inventor Count = 4.1

ph-index = 7

Forward Citations = 112(Granted Patents)


Location History:

  • Hsinchu City, TW (2008)
  • Hsinchu, TW (2006 - 2015)
  • Hsinchu County, TW (2015 - 2017)
  • Zhubei, TW (2014 - 2024)

Company Filing History:

goldMedal28 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 832,680 
Other
 patents

Years Active: 2006-2024

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29 patents (USPTO):
1. 12027419 - Semiconductor device including liner structure (2024-07-02),
2. 11908789 - Selective formation of conductor nanowires (2024-02-20),
3. 10930552 - Method of semiconductor integrated circuit fabrication (2021-02-23),
4. 10490497 - Selective formation of conductor nanowires (2019-11-26),
5. 10453746 - Method of semiconductor integrated circuit fabrication (2019-10-22),
6. 9947583 - Method of semiconductor integrated circuit fabrication (2018-04-17),
7. 9892933 - Lithography using multilayer spacer for reduced spacer footing (2018-02-13),
8. 9837310 - Method of manufacturing a semiconductor device (2017-12-05),
9. 9728503 - Via pre-fill on back-end-of-the-line interconnect layer (2017-08-08),
10. 9721887 - Method of forming metal interconnection (2017-08-01),
11. 9646932 - Method for forming interconnect structure that avoids via recess (2017-05-09),
12. 9570347 - Method of semiconductor integrated circuit fabrication (2017-02-14),
13. 9466525 - Interconnect structures comprising flexible buffer layers (2016-10-11),
14. 9385029 - Method for forming recess-free interconnect structure (2016-07-05),
15. 9252049 - Method for forming interconnect structure that avoids via recess (2016-02-02),

Title: Chao-Hsien Peng: Innovator in Semiconductor Technology

Introduction

Chao-Hsien Peng, based in Zhubei, Taiwan, is a pioneering inventor renowned for his contributions to semiconductor technology. With a remarkable portfolio of 29 patents, Peng has established himself as a key figure in the semiconductor industry, demonstrating a unique blend of technical expertise and innovative thinking.

Latest Patents

Among Chao-Hsien Peng's latest achievements is his patent for a semiconductor device that includes a liner structure. This innovative device features an interconnect structure embedded within a first metallization layer composed of dielectric material, utilizing a first metal material. The inclusion of a first liner structure, which extends along the boundaries of the interconnect structure, incorporates a second metal material that reacts with various dopants. This design enhances the performance and functionality of the semiconductor device.

Another significant invention by Peng involves the selective formation of conductor nanowires. This method encompasses etching a mandrel layer to create mandrel strips, followed by the selective deposition of metal lines on the strips' sidewalls, all while masking the top surfaces with dielectric masks. The process ultimately allows for the formation of vias filled with conductive material, which is critical in developing advanced semiconductor technologies.

Career Highlights

Chao-Hsien Peng has made invaluable contributions during his tenure at Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work has been instrumental in developing cutting-edge technologies that push the boundaries of what is possible in semiconductor design and manufacturing.

Collaborations

Peng has collaborated with esteemed professionals, including Hsiang-Huan Lee and Shau-Lin Shue, in various projects reflecting the spirit of innovation and teamwork. These collaborations underline the importance of collective expertise in advancing technological frontiers.

Conclusion

Chao-Hsien Peng exemplifies the innovative spirit that drives progress in semiconductor technology. With a strong foundation in patent applications and a proven track record of successful inventions, his contributions are set to influence the industry for years to come. As he continues to work on groundbreaking projects, the impact of his work will undoubtedly resonate throughout the field of electronics and technology.

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