The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Apr. 13, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chao-Hsien Peng, Zhubei, TW;
Hsin-Yen Huang, Yonghe, TW;
Hsiang-Huan Lee, Jhudong Township, TW;
Shau-Lin Shue, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/02118 (2013.01); H01L 21/311 (2013.01); H01L 21/31144 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A structure includes a substrate, a low-k dielectric layer over the substrate, and a conductive barrier layer extending into the low-k dielectric layer. The conductive barrier layer includes a sidewall portion. A metal line in the low-k dielectric layer adjoins the conductive barrier layer. An organic buffer layer is between the sidewall portion of the conductive barrier layer and the low-k dielectric layer.