The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Jun. 25, 2020
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Ching-Fu Yeh, Hsinchu, TW;
Yu-Chen Chan, Taichung, TW;
Guanyu Luo, Hsinchu, TW;
Meng-Pei Lu, Hsinchu, TW;
Chao-Hsien Peng, Zhubei, TW;
Shin-Yi Yang, New Taipei, TW;
Ming-Han Lee, Taipei, TW;
Andy Li, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.