The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Oct. 29, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chao-Hsien Peng, Zhubei, TW;

Chi-Liang Kuo, Hsinchu, TW;

Ming-Han Lee, Taipei, TW;

Hsiang-Huan Lee, Jhudong Township, TW;

Shau-Lin Shue, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76844 (2013.01); H01L 21/76847 (2013.01); H01L 21/76855 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53209 (2013.01); H01L 23/53223 (2013.01); H01L 23/53252 (2013.01); H01L 23/53261 (2013.01); H01L 23/53266 (2013.01); H01L 21/76831 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In some embodiments, the present disclosure relates to a conductive interconnect layer. The conductive interconnect layer has a dielectric layer disposed over a substrate. An opening with an upper portion above a horizontal plane and a lower portion below the horizontal plane extends downwardly through the dielectric layer. A first conductive layer fills the lower portion of the opening. An upper barrier layer is disposed over the first conductive layer covering bottom and sidewall surfaces of the upper portion of the opening. A second conductive layer is disposed over the upper barrier layer filling the upper portion of the opening.


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