Chan-Lon Yang

This inventor holds 30 USPTO granted patents, primarily in Plasma Etching Technology. Top assignees: Applied Materials, Inc., Cypress Semiconductor Corporation. Active years: 1993-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chan-Lon Yang. Retrieved from https://idiyas.com/inventor/chan-lon-yang-9hy75cva

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30

% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 16

Forward Citations = 1,223(Granted Patents)

Company Filing History:

22 out of 14,454

Applied Materials, Inc.

patents

8 out of 3,596

Cypress Semiconductor Corporation

patents

Years Active: 1993-2007

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Areas of Expertise:

Plasma Reactor

Etch Process

Inductive Coupling

Silicon Scavenger

Gate Etch

High Selectivity

Transistor Structure

Polymer-Hardening

Oxide Etch

RF Bias Electrode

Magnetic Confinement

Integrated Circuit

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7253094 - Methods for cleaning contact openings to reduce contact resistance (2007-08-07),

2. 7112834 - Gate etch process (2006-09-26),

3. 6977217 - Aluminum-filled via structure with barrier layer (2005-12-20),

4. 6699795 - Gate etch process (2004-03-02),

5. 6545420 - Plasma reactor using inductive RF coupling, and processes (2003-04-08),

6. 6518195 - Plasma reactor using inductive RF coupling, and processes (2003-02-11),

7. 6488807 - Magnetic confinement in a plasma reactor having an RF bias electrode (2002-12-03),

8. 6461904 - Structure and method for making a notched transistor with spacers (2002-10-08),

9. 6444137 - Method for processing substrates using gaseous silicon scavenger (2002-09-03),

10. 6440866 - Plasma reactor with heated source of a polymer-hardening precursor material (2002-08-27),

11. 6406640 - Plasma etching method (2002-06-18),

12. 6403488 - Selective SAC etch process (2002-06-11),

13. 6399514 - High temperature silicon surface providing high selectivity in an oxide etch process (2002-06-04),

14. 6251792 - Plasma etch processes (2001-06-26),

15. 6218312 - Plasma reactor with heated source of a polymer-hardening precursor material (2001-04-17),

Title: The Innovative Journey of Chan-Lon Yang

Introduction: Chan-Lon Yang, a visionary inventor based in Los Gatos, CA, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Chan-Lon Yang holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Chan-Lon Yang has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Chan-Lon Yang has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Chan-Lon Yang's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has established him as a prominent figure in the world of inventors, inspiring the next generation of innovators to dream big and create change.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]