The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Jun. 06, 1995
Kenneth S. Collins, San Jose, CA (US);
Craig A. Roderick, San Jose, CA (US);
John R. Trow, Santa Clara, CA (US);
Chan-Lon Yang, Los Gatos, CA (US);
Jerry Yuen-Kui Wong, Fremont, CA (US);
Jeffrey Marks, San Jose, CA (US);
Peter R. Keswick, Newark, CA (US);
David W. Groechel, Sunnyvale, CA (US);
Jay D. Pinson, II, San Jose, CA (US);
Tetsuya Ishikawa, Chiba, JP;
Lawrence Chang-Lai Lei, Cupertino, CA (US);
Masato M. Toshima, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.