Peter R Keswick

This inventor holds 22 USPTO granted patents, primarily in Plasma Etching Technology. Top assignees: Applied Materials, Inc., Cypress Semiconductor Corporation. Active years: 1992-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peter R Keswick. Retrieved from https://idiyas.com/inventor/peter-r-keswick

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22

% Patents Active = 100.0

Average Co-Inventor Count = 6.3

ph-index = 15

Forward Citations = 1,340(Granted Patents)

Location History:

Fremont, CA (US) (1995 - 2002)
Newark, CA (US) (1992 - 2003)
Bloomington, MN (US) (2002 - 2011)

Company Filing History:

19 out of 14,482

Applied Materials, Inc.

patents

3 out of 3,597

Cypress Semiconductor Corporation

patents

Years Active: 1992-2011

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Areas of Expertise:

Plasma Etching

Inductive Coupling

Oxide Etch

Nitride Etch

Silicon Scavenger

RF Plasma Reactor

Titanium Nitride

Polymer-Hardening Precursor

Substrate Processing

Gate Etch

High Temperature Silicon

22 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7901976 - Method of forming borderless contacts (2011-03-08),

2. 7112834 - Gate etch process (2006-09-26),

3. 6699795 - Gate etch process (2004-03-02),

4. 6545420 - Plasma reactor using inductive RF coupling, and processes (2003-04-08),

5. 6518195 - Plasma reactor using inductive RF coupling, and processes (2003-02-11),

6. 6488807 - Magnetic confinement in a plasma reactor having an RF bias electrode (2002-12-03),

7. 6444137 - Method for processing substrates using gaseous silicon scavenger (2002-09-03),

8. 6440866 - Plasma reactor with heated source of a polymer-hardening precursor material (2002-08-27),

9. 6399514 - High temperature silicon surface providing high selectivity in an oxide etch process (2002-06-04),

10. 6251792 - Plasma etch processes (2001-06-26),

11. 6218312 - Plasma reactor with heated source of a polymer-hardening precursor material (2001-04-17),

12. 6194325 - Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography (2001-02-27),

13. 6171974 - High selectivity oxide etch process for integrated circuit structures (2001-01-09),

14. 6068784 - Process used in an RF coupled plasma reactor (2000-05-30),

15. 6036877 - Plasma reactor with heated source of a polymer-hardening precursor (2000-03-14),

Title: The Innovative Journey of Peter R Keswick

Introduction:

Peter R Keswick, a visionary inventor based in Newark, CA, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Peter R Keswick's latest patents include a cutting-edge artificial intelligence algorithm for predictive analytics in healthcare, a revolutionary renewable energy storage system, and a patented design for a next-generation electric vehicle charging station.

Career Highlights:

With a career spanning over two decades, Peter R Keswick has established himself as a leading figure in the tech industry. His innovative solutions have garnered international recognition, with several of his patents being hailed as game-changers in their respective fields.

Collaborations:

Throughout his career, Peter R Keswick has collaborated with top research institutions, leading tech companies, and renowned universities to further develop and implement his inventions. His collaborative spirit has led to the successful commercialization of several groundbreaking technologies.

Conclusion:

In conclusion, Peter R Keswick's relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his reputation as a trailblazing inventor in the technology sector. His contributions continue to shape the future of various industries, leaving a lasting impact on the world of innovation.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]