The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2002

Filed:

May. 03, 2000
Applicant:
Inventors:

Kenneth S. Collins, San Jose, CA (US);

Chan-Lon Yang, Los Gatos, CA (US);

Jerry Yuen-Kui Wong, Fremont, CA (US);

Jeffrey Marks, San Jose, CA (US);

Peter R. Keswick, Bloomington, MN (US);

David W. Groechel, Los Altos Hills, CA (US);

Craig A. Roderick, San Jose, CA (US);

John R. Trow, San Jose, CA (US);

Tetsuya Ishikawa, Chiba, JP;

Jay D. Pinson, II, San Jose, CA (US);

Lawrence Chang-Lai Lei, Cupertino, CA (US);

Masato M. Toshima, Sunnyvale, CA (US);

Gerald Zheyao Yin, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/00 ;
U.S. Cl.
CPC ...
H05H 1/00 ;
Abstract

The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.


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