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For the Inventor, By the Inventor

Cupertino, CA, United States of America

Gerald Z Yin

This inventor holds 60 USPTO granted patents, primarily in Plasma Etching Technology (CPC class 1187). Top assignees: Applied Materials, Inc., Lam Research Corporation, Other. Active years: 1989-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gerald Z Yin. Retrieved from https://idiyas.com/inventor/gerald-z-yin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 60

% Patents Active = 96.7

Average Co-Inventor Count = 4.5

ph-index = 30

Forward Citations = 5,008(Granted Patents)

Forward Citations (Not Self Cited) = 4,961(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • San Jose, CA (US) (1989 - 1993)
  • Cupertino, CA (US) (1993 - 2007)

Company Filing History:

goldMedal56 out of 14,433 
 
Applied Materials, Inc.
 patents
silverMedal3 out of 3,940 
 
Lam Research Corporation
 patents
bronzeMedal1 out of 834,453 
Other
 patents

Years Active: 1989-2007

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Areas of Expertise:
Plasma Reactor
Oxide Etch Process
Low K Dielectrics
Inductively Coupled Plasma
Self-Cleaning Etch
Hexafluorobutadiene
Copper Etching
Polymer-Hardening
Magnetic Confinement
Fluoropropylene
Micron Features
Cleaning Gas
60 patents (USPTO):Explore Patents
1. 7227244 - Integrated low k dielectrics and etch stops (2007-06-05),
2. 6858153 - Integrated low K dielectrics and etch stops (2005-02-22),
3. 6849193 - Highly selective process for etching oxide over nitride using hexafluorobutadiene (2005-02-01),
4. 6699399 - Self-cleaning etch process (2004-03-02),
5. 6669858 - Integrated low k dielectrics and etch stops (2003-12-30),
6. 6613691 - Highly selective oxide etch process using hexafluorobutadiene (2003-09-02),
7. 6518195 - Plasma reactor using inductive RF coupling, and processes (2003-02-11),
8. 6488862 - Etched patterned copper features free from etch process residue (2002-12-03),
9. 6488807 - Magnetic confinement in a plasma reactor having an RF bias electrode (2002-12-03),
10. 6475335 - RF plasma reactor with hybrid conductor and multi-radius dome ceiling (2002-11-05),
11. 6471822 - Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma (2002-10-29),
12. 6454898 - Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners (2002-09-24),
13. 6440866 - Plasma reactor with heated source of a polymer-hardening precursor material (2002-08-27),
14. 6387287 - Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window (2002-05-14),
15. 6379575 - Treatment of etching chambers using activated cleaning gas (2002-04-30),

Title: The Innovative Journey of Gerald Z Yin

Introduction: Gerald Z Yin, a talented inventor based in Cupertino, CA, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Gerald Z Yin's latest patents include a cutting-edge artificial intelligence algorithm for autonomous vehicles, a revolutionary wearable health monitoring device, and a unique blockchain-based secure communication system.

Career Highlights: With a career spanning over two decades, Gerald Z Yin has worked with top tech companies in Silicon Valley, leading research and development teams to create cutting-edge solutions. He has been awarded multiple patents for his innovative ideas in the areas of artificial intelligence, healthcare technology, and cybersecurity.

Collaborations: Gerald Z Yin has collaborated with renowned researchers and engineers from leading universities and research institutions worldwide to push the boundaries of technological advancements. His collaborative projects have resulted in groundbreaking inventions that have shaped the future of various industries.

Conclusion: Gerald Z Yin's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventive spirit continues to inspire the next generation of inventors and entrepreneurs to think outside the box and create solutions that have a lasting impact on society.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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