Methods for cleaning contact openings to reduce contact resistance

Abstract

A method for processing a semiconductor topography which includes removing metal oxide layers from the bottom of contact openings is provided. In some embodiments, the method may include etching openings within a dielectric layer to expose conductive and silicon surfaces within the semiconductor topography is provided. In such cases, the method further includes exposing the semiconductor topography to an etch process adapted to remove metal oxide material from the conductive surfaces without substantially removing material from the silicon surfaces. In some cases, the etch chemistry used for the etch process may include sulfuric acid. In addition or alternatively, the etch chemistry may include hydrogen peroxide. In any case, the etch chemistry may be distinct from chemistries used to remove residual matter generated from the etch process used to form the openings within the dielectric and/or the removal of the masking layer used to pattern the openings.