The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Feb. 22, 1999
Applicant:
Inventors:
Assignee:
Cypress Semiconductor Corp., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1461 ;
Abstract
A method for plasma etching, comprising etching a structure with a plasma prepared from a gas mixture comprising: (i) an etching gas, and (ii) a strained cyclic (hydro)fluorocarbon gas, has a high etch selectivity of oxide versus nitride, and is particularly useful in a SAC etch process.