San Jose, CA, United States of America

Jim Nulty

This inventor holds 1 USPTO granted patent. Top assignee: Cypress Semiconductor Corporation. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jim Nulty. Retrieved from https://idiyas.com/inventor/jim-nulty

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Jim Nulty - Innovator in Plasma Etching Technology

Introduction

Jim Nulty is a prominent inventor based in San Jose, California. He has made significant contributions to the field of plasma etching, particularly with his innovative methods that enhance etching selectivity. His work is crucial in advancing semiconductor manufacturing processes.

Latest Patents

Jim Nulty holds a patent for a Selective SAC etch process. This method involves plasma etching using a gas mixture that includes an etching gas and a strained cyclic (hydro)fluorocarbon gas. The process boasts a high etch selectivity of oxide versus nitride, making it particularly useful in SAC etch applications.

Career Highlights

Throughout his career, Jim has been associated with Cypress Semiconductor Corporation, where he has applied his expertise in plasma etching. His innovative approaches have contributed to the company's advancements in semiconductor technology.

Collaborations

Jim has worked alongside talented colleagues such as Chan-Lon Yang and Dan Arnzen. Their collaborative efforts have furthered the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Jim Nulty's contributions to plasma etching technology exemplify his innovative spirit and dedication to advancing semiconductor manufacturing. His patent and collaborative work continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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