The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Jan. 09, 2001
Applicant:
Inventors:
Bo Jin, Campbell, CA (US);
Chan-Lon Yang, Los Gatos, CA (US);
Assignee:
Cypress Semiconductor Corp., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1338 ;
U.S. Cl.
CPC ...
H01L 2/1338 ;
Abstract
A method of forming a semiconductor structure includes filling a trench in a first dielectric layer with a gate material. The first dielectric layer is on a semiconductor substrate, and spacers are in the trench. A semiconductor device formed from this structure includes notched gates.