The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Dec. 03, 2002
Mira Ben-tzur, Sunnyvale, CA (US);
Gorley L. Lau, Fremont, CA (US);
Ivan P. Ivanov, Apple Valley, MN (US);
Feng Dai, San Jose, CA (US);
Chan-lon Yang, Los Gatos, CA (US);
Mira Ben-Tzur, Sunnyvale, CA (US);
Gorley L. Lau, Fremont, CA (US);
Ivan P. Ivanov, Apple Valley, MN (US);
Feng Dai, San Jose, CA (US);
Chan-Lon Yang, Los Gatos, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
In one embodiment, a via structure includes a liner, a barrier layer over the liner, and an aluminum layer over the barrier layer. The barrier layer helps minimize reaction between the aluminum layer and the liner, thus helping minimize void formation in the via. The liner and the barrier layer may be deposited in-situ by ionized metal plasma (IMP) physical vapor deposition (PVD). In one embodiment, the liner comprises titanium, while the barrier layer comprises titanium nitride.