Feng Dai

Title: The Innovations of Feng Dai

Introduction

Feng Dai is an accomplished inventor based in San Jose, CA. He holds a total of 3 patents that showcase his contributions to the field of integrated circuits. His work has significantly impacted the design and functionality of electronic components.

Latest Patents

One of Feng Dai's latest patents is for a trench-based capacitor for integrated circuits. This invention allows for the formation of capacitors between an electrically conductive trench and other portions of the integrated circuit. The capacitor provides a relatively large capacitance while occupying a small area, which is a significant advantage in circuit design. Another notable patent is for an aluminum-filled via structure with a barrier layer. This design includes a liner, a barrier layer over the liner, and an aluminum layer over the barrier layer. The barrier layer minimizes the reaction between the aluminum layer and the liner, thus reducing void formation in the via. The liner is typically made of titanium, while the barrier layer consists of titanium nitride, both of which can be deposited in-situ by ionized metal plasma physical vapor deposition.

Career Highlights

Feng Dai has worked with prominent companies in the semiconductor industry, including Cypress Semiconductor Corporation and Chartered Semiconductor Manufacturing Ltd. His experience in these organizations has allowed him to develop innovative solutions that enhance the performance of integrated circuits.

Collaborations

Throughout his career, Feng has collaborated with talented professionals such as Fuad Badrieh and Bartosz Banachowicz. These collaborations have contributed to the advancement of technology in the semiconductor field.

Conclusion

Feng Dai's innovative patents and career achievements highlight his significant contributions to the field of integrated circuits. His work continues to influence the development of electronic components, making him a notable figure in the industry.