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For the Inventor, By the Inventor

Steinhoering, Germany

Carolin Tolksdorf

USPTO Granted Patents = 15


Average Co-Inventor Count = 4.9

ph-index = 3

Forward Citations = 34(Granted Patents)


Location History:

  • Steinhoering, DE (2010 - 2014)
  • Tutzing, DE (2013 - 2017)
  • Groembach, DE (2017 - 2018)

Company Filing History:

goldMedal9 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
silverMedal5 out of 14,705 
 
Infineon Technologies Ag
 patents
bronzeMedal2 out of 29,302 
 
Robert Boschgmbh
 patents
where one patent can have more than one assignee

Years Active: 2010-2018

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15 patents (USPTO):
1. 10074723 - Field plate trench FET and a semiconductor component (2018-09-11),
2. 9711621 - Trench transistor having a doped semiconductor region (2017-07-18),
3. 9660550 - Generator device for the voltage supply of a motor vehicle (2017-05-23),
4. 8829584 - Semiconductor device with a dynamic gate-drain capacitance (2014-09-09),
5. 8815686 - Lateral trench transistor, as well as a method for its production (2014-08-26),
6. 8431988 - Lateral trench transistor, as well as a method for its production (2013-04-30),
7. 8324686 - Semiconductor device and method for manufacturing (2012-12-04),
8. 8294206 - Integrated circuit device and method for its production (2012-10-23),
9. 8273622 - Semiconductor with a dynamic gate-drain capacitance (2012-09-25),
10. 7982253 - Semiconductor device with a dynamic gate-drain capacitance (2011-07-19),
11. 7977737 - Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance (2011-07-12),
12. 7973362 - Semiconductor component and method for producing it (2011-07-05),
13. 7973359 - Semiconductor device with a charge carrier compensation structure and process (2011-07-05),
14. 7821064 - Lateral MISFET and method for fabricating it (2010-10-26),
15. 7777278 - Lateral semiconductor component with a drift zone having at least one field electrode (2010-08-17),

Title: Carolin Tolksdorf: Innovator in Semiconductor Technology

Introduction

Carolin Tolksdorf is a prominent inventor based in Steinhoering, Germany. She has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. Her work focuses on advanced transistor designs that enhance the performance and efficiency of electronic devices.

Latest Patents

Among her latest innovations are two notable patents. The first is a field plate trench FET, which includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate. Both the gate and the field plate are situated within a trench in the substrate and are surrounded by an insulator. Additionally, a p-doped domain is located within the substrate below the trench. The second patent describes a trench transistor that features a semiconductor body, including a source region, a body region, and a drain region connected to a drain contact. This design incorporates a gate trench with a gate electrode that controls current flow between the source and drain regions.

Career Highlights

Carolin has worked with leading companies in the semiconductor industry, including Infineon Technologies Austria AG and Infineon Technologies AG. Her experience in these organizations has allowed her to develop cutting-edge technologies that push the boundaries of semiconductor applications.

Collaborations

Throughout her career, Carolin has collaborated with notable colleagues such as Armin Willmeroth and Franz Hirler. These partnerships have contributed to her success and the advancement of her innovative projects.

Conclusion

Carolin Tolksdorf is a trailblazer in semiconductor technology, with a remarkable portfolio of patents that reflect her expertise and dedication to innovation. Her contributions continue to shape the future of electronic devices and systems.

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