Infineon Technologies Austria Ag

Infineon Technologies Ag

Robert Boschgmbh

Carolin Tolksdorf

Armin Willmeroth

Franz Hirler

Markus Schmitt

Anton Mauder

Uwe Wahl

Winfried Kaindl

Hans-Joachim Schulze

Thorsten Meyer

Gerald Deboy

Michael Rueb

Michael Rüb

Carsten Schaeffer

Holger Kapels

Frank Dieter Pfirsch

Alfred Goerlach

Dietrich Bonart

Dirk Ahlers

Richard Spitz

Ralf Henninger

Timm Hoehr

Carsten Schäffer

Frank Lipski

Ingo Martini

A field plate trench FET includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate, both the gate and the field plate being disposed within a trench in the substrate and being surrounded by an insulator. A p-doped domain is disposed within the substrate below the trench. Also described is a semiconductor component having a substrate and a plurality of field plate trench FETs disposed within the substrate.

Field plate trench FET and a semiconductor component

A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.

Trench transistor having a doped semiconductor region

A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.

Generator device for the voltage supply of a motor vehicle

A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.

Semiconductor device with a dynamic gate-drain capacitance

A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench.

Lateral trench transistor, as well as a method for its production

A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

A semiconductor device and method for manufacturing. One embodiment provides a semiconductor device including an active cell region and a gate pad region. A conductive gate layer is arranged in the active cell region and a conductive resistor layer is arranged in the gate pad region. The resistor layer includes a resistor region which includes a grid-like pattern of openings formed in the resistor layer. A gate pad metallization is arranged at least partially above the resistor layer and in electrical contact with the resistor layer. An electrical connection is formed between the gate layer and the gate pad metallization, wherein the electrical connection includes the resistor region.

Semiconductor device and method for manufacturing

An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance Cin a cell region of the semiconductor device.

Integrated circuit device and method for its production

Semiconductor with a dynamic gate-drain capacitance

A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance

A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Nof charge carriers present in a volume Vbetween two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Nof charge carriers present in a volume Vbetween two charge compensation regions that are adjacent in a direction parallel to the edge, N&#x3e;Nholds true.

Semiconductor component and method for producing it

A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

Semiconductor device with a charge carrier compensation structure and process

A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.

Lateral MISFET and method for fabricating it

A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

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Steinhoering, Germany

Carolin Tolksdorf