The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7977737 B1

Date of Patent:

Jul. 12, 2011

Filed:

Mar. 06, 2008

Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance

Applicants:

Armin Willmeroth, Augsburg, DE;

Winfried Kaindl, Unterhaching, DE;

Carolin Tolksdorf, Steinhoering, DE;

Anton Mauder, Kolbermoor, DE;

Holger Kapels, Holzkirchen, DE;

Gerald Deboy, Klagenfurt, AT;

Franz Hirler, Isen, DE;

Inventors:

Armin Willmeroth, Augsburg, DE;

Winfried Kaindl, Unterhaching, DE;

Carolin Tolksdorf, Steinhoering, DE;

Anton Mauder, Kolbermoor, DE;

Holger Kapels, Holzkirchen, DE;

Gerald Deboy, Klagenfurt, AT;

Franz Hirler, Isen, DE;

Assignee:

Infineon Technologies Austria AG, Villach, AT;

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

N Drew Richards

Assistant Examiner:

Michael Jung

Int. Cl.

CPC ...

H01L 29/66 (2006.01); H01L 21/337 (2006.01);

U.S. Cl.

CPC ...

Abstract

A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

Find Patent Forward Citations

Willmeroth, Armin. (2011). Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance (U.S. Patent No. 7977737). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7977737

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile