The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Mar. 14, 2006
Michael Rueb, Faak Am See, AT;
Markus Schmitt, Neukeferloh, DE;
Carolin Tolksdorf, Steinhoering, DE;
Uwe Wahl, München, DE;
Armin Willmeroth, Augsburg, DE;
Michael Rueb, Faak Am See, AT;
Markus Schmitt, Neukeferloh, DE;
Carolin Tolksdorf, Steinhoering, DE;
Uwe Wahl, München, DE;
Armin Willmeroth, Augsburg, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.