The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Oct. 28, 2005
Franz Hirler, Isen, DE;
Uwe Wahl, München, DE;
Thorsten Meyer, München, DE;
Michael Rüb, Faak am See, AT;
Armin Willmeroth, Augsburg, DE;
Markus Schmitt, Neukeferloh, DE;
Carolin Tolksdorf, Tutzing, DE;
Carsten Schäffer, Sattendorf, AT;
Franz Hirler, Isen, DE;
Uwe Wahl, München, DE;
Thorsten Meyer, München, DE;
Michael Rüb, Faak am See, AT;
Armin Willmeroth, Augsburg, DE;
Markus Schmitt, Neukeferloh, DE;
Carolin Tolksdorf, Tutzing, DE;
Carsten Schäffer, Sattendorf, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.