The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Jul. 30, 2014
Infineon Technologies Ag, Neubiberg, DE;
Franz Hirler, Isen, DE;
Uwe Wahl, Munich, DE;
Thorsten Meyer, Munich, DE;
Michael Rüb, Munich, DE;
Armin Willmeroth, Augsburg, DE;
Markus Schmitt, Neubiberg, DE;
Carolin Tolksdorf, Tutzing, DE;
Carsten Schaeffer, Annenheim, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.