The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Jun. 15, 2011
Anton Mauder, Kolbermoor, DE;
Hans-joachim Schulze, Taufkirchen, DE;
Carolin Tolksdorf, Steinhoering, DE;
Winfried Kaindl, Unterhaching, DE;
Armin Willmeroth, Augsburg, DE;
Anton Mauder, Kolbermoor, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Carolin Tolksdorf, Steinhoering, DE;
Winfried Kaindl, Unterhaching, DE;
Armin Willmeroth, Augsburg, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.