Byung Yoon Kim

Title: Byung Yoon Kim: Innovator in Memory Device Technology

Introduction

Byung Yoon Kim is a prominent inventor based in Boise, ID (US), known for his significant contributions to memory device technology. With a total of 14 patents to his name, Kim has made remarkable advancements in the field of semiconductor memory systems.

Latest Patents

Among his latest patents is the "Metal gate memory device and method," which discloses apparatus and methods for memory devices and systems. This invention includes an array of memory cells and a transistor located on the periphery of the array. The design features a number of data lines coupled to the memory cells, extending over a first metal gate of a transistor, where these data lines are formed from a second metal, creating a direct interface with the first metal gate. Another notable patent is for "Single crystalline silicon stack formation and bonding to a CMOS wafer." This patent provides systems, methods, and apparatus for forming vertical three-dimensional (3D) memory. The method involves forming arrays of vertically stacked layers for memory cells, utilizing a silicon substrate and alternating layers of silicon germanium and silicon.

Career Highlights

Throughout his career, Byung Yoon Kim has worked with notable companies, including Micron Technology Incorporated. His work has significantly impacted the development of advanced memory technologies, enhancing the performance and efficiency of memory devices.

Collaborations

Kim has collaborated with esteemed colleagues such as Sangmin Hwang and Kyuseok Lee, contributing to innovative projects in the semiconductor industry.

Conclusion

Byung Yoon Kim's contributions to memory device technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor memory systems.