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For the Inventor, By the Inventor

Boise, ID, United States of America

Byung Yoon Kim

This inventor holds 15 USPTO granted patents and 11 published patent applications, primarily in Semiconductor Devices. Top assignees: Micron Technology Incorporated, Boise State University, Other. Active years: 1993-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung Yoon Kim. Retrieved from https://idiyas.com/inventor/byung-yoon-kim-p66de2tx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 86.7

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Location History:

  • Woodland Hills, CA (US) (1993)
  • Boise, ID (US) (2013 - 2024)

Company Filing History:

goldMedal13 out of 39,294 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 93 
 
Boise State University
 patents
bronzeMedal1 out of 834,601 
Other
 patents

Years Active: 1993-2026

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Areas of Expertise:
Memory Word Line
Metal Gate Device
Single Crystalline Silicon
Finfets
Buried Connection Line
Vertical Contacts
Multi-Direction Conductive Lines
Contact Patterning
Optical Fiber Probe
Cigarette Lighter
15 patents (USPTO):Explore Patents
1. 12718869 - Apparatus including memory word line structure (2026-08-25),
2. 12274051 - Metal gate memory device and method (2025-04-08),
3. 12224201 - Single crystalline silicon stack formation and bonding to a cmos wafer (2025-02-11),
4. 12199094 - Apparatuses including Finfets having different gate oxide configurations, and related computing systems (2025-01-14),
5. 12063797 - Buried connection line for peripheral area of a memory device (2024-08-13),
6. 12052858 - Vertical contacts for semiconductor devices (2024-07-30),
7. 11903183 - Conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devices (2024-02-13),
8. 11869803 - Single crystalline silicon stack formation and bonding to a CMOS wafer (2024-01-09),
9. 11791260 - Contacts for twisted conductive lines within memory arrays (2023-10-17),
10. 11696432 - Multi-direction conductive line and staircase contact for semiconductor devices (2023-07-04),
11. 11631681 - Vertical contacts for semiconductor devices (2023-04-18),
12. 11342218 - Single crystalline silicon stack formation and bonding to a CMOS wafer (2022-05-24),
13. 11152375 - Contact patterning (2021-10-19),
14. 8549660 - Cantilever-based optical fiber probe interfacial force microscope for partial immersion in liquid (2013-10-01),
15. 5228848 - Cigarette lighter with message (1993-07-20),

Title: Byung Yoon Kim: Innovator in Memory Device Technology

Introduction

Byung Yoon Kim is a prominent inventor based in Boise, ID (US), known for his significant contributions to memory device technology. With a total of 14 patents to his name, Kim has made remarkable advancements in the field of semiconductor memory systems.

Latest Patents

Among his latest patents is the "Metal gate memory device and method," which discloses apparatus and methods for memory devices and systems. This invention includes an array of memory cells and a transistor located on the periphery of the array. The design features a number of data lines coupled to the memory cells, extending over a first metal gate of a transistor, where these data lines are formed from a second metal, creating a direct interface with the first metal gate. Another notable patent is for "Single crystalline silicon stack formation and bonding to a CMOS wafer." This patent provides systems, methods, and apparatus for forming vertical three-dimensional (3D) memory. The method involves forming arrays of vertically stacked layers for memory cells, utilizing a silicon substrate and alternating layers of silicon germanium and silicon.

Career Highlights

Throughout his career, Byung Yoon Kim has worked with notable companies, including Micron Technology Incorporated. His work has significantly impacted the development of advanced memory technologies, enhancing the performance and efficiency of memory devices.

Collaborations

Kim has collaborated with esteemed colleagues such as Sangmin Hwang and Kyuseok Lee, contributing to innovative projects in the semiconductor industry.

Conclusion

Byung Yoon Kim's contributions to memory device technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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