The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jan. 28, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Byung Yoon Kim, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01G 4/008 (2006.01); H01G 4/08 (2006.01); H01G 4/012 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10894 (2013.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/08 (2013.01); H01L 21/02123 (2013.01); H01L 27/10805 (2013.01); H01L 27/10852 (2013.01);
Abstract
Methods, apparatuses, and systems related to patterning a material over a sense line contact are described. An example method includes forming a sense line contact pattern at an angle to a sense line direction over semiconductor structures on a substrate, wherein the angle to the sense line direction is formed along a path between a sense line contact in a first sense line column and a sense line contact in a second sense line column. The example method further includes removing a portion of a mask material corresponding to the sense line contact pattern to form sense line contacts.