Buried connection line for peripheral area of a memory device

Abstract

An apparatus includes a substrate and a memory cell array disposed on the substrate. The apparatus also includes a logic cell disposed on the substrate in a peripheral region adjacent the memory cell array. The apparatus further includes a trench isolation region disposed in the substrate in the peripheral region. The trench isolation region either separates a first active area of the logic cell from a second active area of the logic cell or separates the logic cell from an adjacent logic cell. The logic cell includes a connection line that is buried within the trench isolation region. The connection line can be formed as an extension of a buried word line in the memory cell array region during a same fabrication process that forms the corresponding buried word line. By extending the buried word line into the peripheral region, the buried connection line can be formed without additional processing.