San Jose, CA, United States of America

Brian Hayes Burrows

This inventor holds 30 USPTO granted patents and 27 published patent applications and 1 EPO patent, primarily in Chemical Vapor Deposition. Top assignees: Applied Materials, Inc., Alta Devices, Inc.. Active years: 2000-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Brian Hayes Burrows. Retrieved from https://idiyas.com/inventor/brian-hayes-burrows

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 30 

% Patents Active = 83.3

 

Average Co-Inventor Count = 5.0

ph-index = 7

Forward Citations = 340(Granted Patents)


Company Filing History:


Years Active: 2000-2026

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Areas of Expertise:
Rotary Reactor
Epitaxial Deposition
CVD Chambers
Thermal Uniformity
Gallium Nitride
Substrate Processing
Energy Beam
Wafer Transfer
Gas Delivery
Precursor Disassociation
Multi-Layer EPI
Reflector Assembly
30 patents (USPTO):Explore Patents

Title: The Innovative Journey of Brian Hayes Burrows

Introduction: Brian Hayes Burrows is a renowned inventor based in San Jose, CA, known for his groundbreaking contributions to various technological fields.

Latest Patents: Brian Hayes Burrows holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise.

Career Highlights: With over two decades of experience in the tech industry, Burrows has worked for leading companies such as Google X and Tesla, where he played a key role in developing cutting-edge technologies.

Collaborations: Throughout his career, Brian Hayes Burrows has collaborated with top researchers from Stanford University and MIT, fostering a culture of innovation and pushing the boundaries of what is possible.

Conclusion: Brian Hayes Burrows continues to inspire the next generation of inventors with his passion for innovation and his relentless pursuit of technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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