Applied Materials, Inc.

Alta Devices, Inc.

Brian Hayes Burrows

Shu-Kwan Danny Lau

Nyi O Myo

Brian J Brown

David Masayuki Ishikawa

Zhiyuan Ye

Gang He

Kartik Bhupendra Shah

Lori D Washington

Sandeep Nijhawan

Thomas J Gmitter

Ala Moradian

Kenric T Choi

Richard Omar Collins

Alexander Tam

David K Carlson

Schubert S Chu

Kailash Kiran Patalay

Steven Verhaverbeke

Tetsuya Ishikawa

Joseph Yudovsky

Satheesh Kuppurao

Alexander N Lerner

Son Truong Nguyen

Abhishek Dube

Anzhong Chang

David H Quach

Yuriy Melnik

Martin A Hilkene

Olga Kryliouk

Ann P Waldhauer

Andreas Schmid

Sumedh Acharya

Ronald R Stevens

Herman Diniz

Jacob Grayson

James D Felsch

Paul J Steffas

Howard Beckford

Xiaowei Li

Lit Ping Lam

Abril Cabreros

Ian Ong

Jeffrey Ronald Campbell

Zouming Zhu

Errol Antonio Sanchez

David Berkstressor

Zuoming Zhu

Lily L Pang

Toshiyuki Nakagawa

Jie Su

Preetham P Rao

Chia Cheng Chin

Ji-Dih Hu

Juan Chacin

Ho-Man Rodney Chiu

Enle Choo

Manish Hemkar

Danny D Wang

Anand Vasudev

Joseph Arthur Kraus

Harsukhdeep S Ratia

Eugene Smargiassi

Preetham Prahallada Rao

Gregory S Verdict

Shainish Nellikka

Janardhan Devrajan

A method and apparatus for providing uniform heating of substrates disposed within a processing chamber is provided. The apparatus includes one or more heating coils disposed in the processing chamber. The one or more heating coils are electrically coupled to a power source using heater rods. The heater rods are coupled to a socket on a distal end opposite the connection to the heating coils. The socket includes a feedthrough and a cooling plate configured to remove contaminants, such as methane, from the area surrounding the heater rod.

Chamber body feedthrough for in chamber resistive heating element

A process chamber includes a chamber body having a ceiling disposed above a floor with a chassis and an injector ring disposed therebetween. Upper and lower clamp rings secure the upper and floors, respectively, in place. An upper heating module is coupled to the upper clamp ring above the ceiling. A lower heating module is coupled to the lower clamp ring below the floor.

Epitaxial deposition chamber

An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

Multi-layer EPI chamber body

A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

Multi-thermal CVD chambers with shared gas delivery and exhaust system

Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

Chamber injector

Methods and apparatus for an upper reflector assembly for use in a process chamber are provided herein. In some embodiments, an upper reflector assembly for use in a process chamber includes a reflector mounting ring; and upper reflector plate coupled to the reflector mounting ring and having an upper surface and lower surface, wherein the lower surface includes a plurality of linear channels extending substantially parallel to each other across the lower surface, and wherein the upper reflector plate includes air cooling slots extending from the upper surface to the lower surface.

Linear lamp array for improved thermal uniformity and profile control

Methods and apparatus for depositing material on a continuous substrate are provided herein. In some embodiments, an apparatus for processing a continuous substrate includes: a first chamber having a first volume; a second chamber having a second volume fluidly coupled to the first volume; and a plurality of process chambers, each having a process volume defining a processing path between the first chamber and the second chamber, wherein the process volume of each process chamber is fluidly coupled to each other, to the first volume, and to the second volume, and wherein the first chamber, the second chamber, and the plurality of process chambers are configured to process a continuous substrate that extends from the first chamber, through the plurality of process chambers, and to the second chamber.

Methods and apparatus for depositing materials on a continuous substrate

Embodiments described herein generally relate to an in-situ metrology system that can constantly provide an uninterrupted optical access to a substrate disposed within a process chamber. In one embodiment, a metrology system for a substrate processing chamber is provided. The metrology system includes a sensor view pipe coupling to a quartz dome of a substrate processing chamber, a flange extending radially from an outer surface of the sensor view pipe, and a viewport window disposed on the flange, the viewport window having spectral ranges chosen for an optical sensor that is disposed on or adjacent to the viewport window.

Purged viewport for quartz dome in epitaxy reactor

An additive manufacturing system includes a platform to support an object to be fabricated, a dispenser to deliver a plurality of layers of a feed material over the platform, a controller configured to store digital data representing a pre-defined pattern, a laser configured to generate a laser beam to impinge an outermost layer of the feed material and coupled to the controller to fuse the feed material in the pre-defined pattern, and a plurality of independently controllable infrared lamps, each infrared lamp directed to a different section of an outermost layer of the feed material.

Additive manufacturing having energy beam and lamp array

Embodiment disclosed herein include a liner assembly, comprising an injector plate liner, a gas injector liner coupled to the injector plate liner, an upper process gas liner coupled to the gas injector liner, a lower process gas liner coupled to the upper process gas liner, and an injector plate positioned between the injector plate liner and the upper process gas liner, wherein a cooling fluid channel is formed in the injector plate adjacent to the gas injector liner.

Methods and apparatus for gallium nitride deposition

A reactor for chemical vapor deposition is equipped with an IR radiation compensating susceptor assembly that supports one or more semiconductor substrates above linear IR heater lamps arranged in a parallel array. A set of primary IR radiation reflectors beneath the lamps directs IR radiation back toward the susceptor in a pattern selected to provide uniform IR irradiation of the susceptor assembly to thereby uniformly heat the substrates. Secondary IR shield reflectors may be provided in selected patterns on the underside of the susceptor assembly as a fine tuning measure to direct IR radiation away from the assembly in a controlled pattern. The combined IR radiation reflectors have an IR signature that compensates for any non-uniform heating profile created by the linear IR heater lamp array. The heating profile of the lamp array might also be tailored in order to reduce the amount of compensation required to be supplied by the IR reflectors.

Reflector and susceptor assembly for chemical vapor deposition reactor

Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process.

Epitaxial lift off systems and methods

In some embodiments, an substrate processing system may include a chamber body, a heater assembly disposed within the chamber body, wherein the heater assembly includes a plurality of resistive heater elements coupled together to form an isothermal heated enclosure, and a process kit disposed within the isothermal heated enclosure and having an inner processing volume that includes a plurality of substrate supports to support substrates when disposed thereon, wherein the process kit includes a first processing gas inlet to provide processing gases to the inner processing volume, a first carrier gas inlet to provide a carrier gas to the inner processing volume, and a first exhaust outlet, and a first gas heater coupled via a first conduit to the first carrier gas inlet to heat the carrier gas prior to flowing into the inner processing volume.

Process gas preheating systems and methods for double-sided multi-substrate batch processing

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Multi-gas straight channel showerhead

Growing community of inventors

San Jose, CA, United States of America

Brian Hayes Burrows