The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2023

Filed:

Oct. 06, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shu-Kwan Lau, Sunnyvale, CA (US);

Lit Ping Lam, Singapore, SG;

Preetham Rao, Santa Clara, CA (US);

Kartik Shah, Saratoga, CA (US);

Ian Ong, Singapore, SG;

Nyi O. Myo, San Jose, CA (US);

Brian H. Burrows, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/458 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45572 (2013.01); C23C 16/4583 (2013.01); C23C 16/46 (2013.01);
Abstract

Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.


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