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For the Inventor, By the Inventor

Boise, ID, United States of America

Brenda D Kraus

This inventor holds 51 USPTO granted patents and 8 published patent applications and 1 EPO patent, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Micron Technology Incorporated, Other. Active years: 2000-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Brenda D Kraus. Retrieved from https://idiyas.com/inventor/brenda-d-kraus

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 51 

% Patents Active = 66.7

 

Average Co-Inventor Count = 2.5

ph-index = 13

Forward Citations = 948(Granted Patents)

Forward Citations (Not Self Cited) = 889(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Meridan, ID (US) (2000)
  • Meridian, ID (US) (2000 - 2011)
  • Boise, ID (US) (2002 - 2024)

Company Filing History:

goldMedal49 out of 39,176 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 2000-2025

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Areas of Expertise:
Electrode Formation
Conductive Structures
Silicon Nitride
Atomic Layer Deposition
Rhodium-Based Charge Traps
Titanium Nitride Films
Field Emission Device
Ruthenium Silicide
Capacitor Dielectric
Nanoparticle Charge Storage
Mobility Layers
DRAM Circuitry
51 patents (USPTO):Explore Patents
1. 12197550 - Providing access to a computing device (2025-01-14),
2. 12046658 - Electrode formation (2024-07-23),
3. 11990528 - Assemblies having conductive structures with three or more different materials (2024-05-21),
4. 11789746 - Computing device reboot (2023-10-17),
5. 11705500 - Assemblies having conductive structures with three or more different materials (2023-07-18),
6. 11651955 - Methods of forming silicon nitride including plasma exposure (2023-05-16),
7. 11467850 - Computing device reboot (2022-10-11),
8. 11251261 - Forming a barrier material on an electrode (2022-02-15),
9. 11145710 - Electrode/dielectric barrier material formation and structures (2021-10-12),
10. 10964532 - Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features (2021-03-30),
11. 10957775 - Assemblies having conductive structures with three or more different materials (2021-03-23),
12. 9865456 - Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures (2018-01-09),
13. 9496355 - Conductive nanoparticles (2016-11-15),
14. 8716060 - Confined resistance variable memory cell structures and methods (2014-05-06),
15. 8633110 - Titanium nitride films (2014-01-21),

Title: Brenda D Kraus: Pioneering Inventor from Boise

Introduction: Brenda D Kraus is a trailblazing inventor based in Boise, Idaho. With a passion for innovation and a drive to make a difference, she has made significant contributions to the field of technology.

Latest Patents: Brenda D Kraus holds several patents in the areas of renewable energy, sustainable agriculture, and smart home technology. Her most recent patent involves a groundbreaking method for optimizing solar panel efficiency in varying weather conditions.

Career Highlights: Throughout her career, Brenda D Kraus has worked with top research institutions and leading tech companies to bring her inventions to life. Her dedication to pushing the boundaries of what is possible has earned her recognition as a visionary in the industry.

Collaborations: Brenda D Kraus has collaborated with fellow inventors, engineers, and scientists to develop cutting-edge solutions to complex challenges. Her ability to work effectively in multidisciplinary teams has been instrumental in the success of her projects.

Conclusion: Brenda D Kraus continues to inspire others with her innovative spirit and commitment to creating a more sustainable future. Her work serves as a testament to the power of creativity and perseverance in driving meaningful change in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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