The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Nov. 14, 2011
Brenda D Kraus, Boise, ID (US);
Eugene P. Marsh, Boise, ID (US);
Brenda D Kraus, Boise, ID (US);
Eugene P. Marsh, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The use of a monolayer or partial monolayer sequencing process to form conductive titanium nitride produces a reliable structure for use in a variety of electronic devices. In an embodiment, a structure can be formed by using ammonia and carbon monoxide reactant materials with respect to a titanium-containing precursor exposed to a substrate. Such a TiN layer has a number of uses including, but not limited to, use as a diffusion barrier underneath another conductor or use as an electro-migration preventing layer on top of a conductor. Such deposited TiN material may have characteristics associated with a low resistivity, a smooth topology, high deposition rates, excellent step coverage, and electrical continuity.