The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Jul. 11, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
An-Jen B. Cheng, Boise, ID (US);
Brenda D. Kraus, Boise, ID (US);
Sanket S. Kelkar, Boise, ID (US);
Matthew N. Rocklein, Boise, ID (US);
Christopher W. Petz, Boise, ID (US);
Richard Beeler, Boise, ID (US);
Dojun Kim, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/018 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H10B 12/00 (2023.01); H01G 4/005 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01G 4/018 (2013.01); H01L 21/02156 (2013.01); H01L 21/02178 (2013.01); H01L 21/0228 (2013.01); H01L 21/28194 (2013.01); H10B 12/30 (2023.02); H01G 4/005 (2013.01); H01L 21/02164 (2013.01); H01L 21/02194 (2013.01);
Abstract
Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.