Location History:
- Hanno, JP (2013 - 2017)
- Saitama, JP (2007 - 2022)
Company Filing History:
Years Active: 2007-2022
Title: Akihiko Sugai: Innovator in Semiconductor Technology
Introduction
Akihiko Sugai is a prominent inventor based in Saitama, Japan, known for his significant contributions to semiconductor technology. With a total of 10 patents to his name, Sugai has made remarkable advancements in the field, particularly in the manufacturing of semiconductor devices.
Latest Patents
Among his latest patents, Sugai has developed a method of manufacturing semiconductor devices that includes a semiconductor substrate, a drift layer of a first conductivity type, and a well region of a second conductivity type. This innovative semiconductor device features a high-concentration region of the second conductivity type, a source region of the first conductivity type, and an insulating film provided on the drift layer. The design incorporates a first contact metal film made of titanium nitride and a second contact metal film made of titanium, enhancing the device's performance and reliability. Another notable patent involves a silicon carbide semiconductor device that includes n-type regions and p-type body regions, showcasing Sugai's expertise in creating efficient semiconductor structures.
Career Highlights
Throughout his career, Akihiko Sugai has worked with esteemed companies such as Shindengen Electric Manufacturing Company Limited and Showa Denko K.K. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.
Collaborations
Sugai has collaborated with notable coworkers, including Tetsuto Inoue and Shunichi Nakamura, further enhancing his work in the semiconductor field. Their combined expertise has led to significant advancements in the technology.
Conclusion
Akihiko Sugai's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods and designs continue to influence the development of advanced semiconductor devices.