The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Apr. 11, 2018
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Teppei Takahashi, Saitama, JP;
Tetsuto Inoue, Saitama, JP;
Akihiko Sugai, Saitama, JP;
Takashi Mochizuki, Saitama, JP;
Shunichi Nakamura, Saitama, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A semiconductor device has: a semiconductor substrate; a drift layer of a first conductivity type; a well region of a second conductivity type; a high-concentration region of the second conductivity type, a source region of the first conductivity type; an insulating film provided on the drift layer; a first contact metal film in contact with the source region and the high-concentration region through a first opening provided in the insulating film; and a second contact metal film formed on a surface of the first contact metal film and contacting the high-concentration region through a second opening provided in the first contact metal film; a source electrode film formed on a surface of a contact metal layer including the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.