The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Jul. 10, 2015
Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, Tokyo, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A semiconductor device includes an element portion and a gate pad portion on the same wide gap semiconductor substrate. The element portion includes a first trench structure having a plurality of first protective trenches and first buried layers formed deeper than gate trenches. The gate pad portion includes a second trench structure having a plurality of second protective trenches and second buried layers. The second trench structure is either one of a structure where the second trench structure includes: a p-type second semiconductor region and a second buried layer made of a conductor or a structure where the second trench structure includes a second buried layer formed of a metal layer which forms a Schottky contact. The second buried layer is electrically connected with the source electrode layer.