The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2007
Filed:
Jul. 18, 2002
Mizue Kitada, Saitama, JP;
Kosuke Oshima, Saitama, JP;
Toru Kurosaki, Saitama, JP;
Shinji Kunori, Saitama, JP;
Akihiko Sugai, Saitama, JP;
Mizue Kitada, Saitama, JP;
Kosuke Oshima, Saitama, JP;
Toru Kurosaki, Saitama, JP;
Shinji Kunori, Saitama, JP;
Akihiko Sugai, Saitama, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A transistor and diode having a low resistance and a high breakdown voltage are provided. When the bottom portion of a narrow trench having the shape of a rectangular parallelepiped is filled with a semiconductor grown by epitaxial method, a {1 0 0} plane is exposed at the sidewalls of the narrow trench. The semiconductor is epitaxially grown at a constant rate on each sidewall of the narrow trench; thereby, creating a filling material with no voids present therein. The concentration and width of the filling material are optimized. This allows the portion located between the filling materials in a drain layer to be completely depleted when the filling material is completely depleted; thereby, making it possible to establish an electric field having a constant strength in the depletion layer extended in the drain layer.