The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2017

Filed:

Sep. 24, 2014
Applicant:

Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;

Inventors:

Tetsuto Inoue, Hanno, JP;

Akihiko Sugai, Hanno, JP;

Shunichi Nakamura, Hanno, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/12 (2006.01); G06F 17/50 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); G06F 17/5068 (2013.01); H01L 23/535 (2013.01); H01L 29/0619 (2013.01); H01L 29/0642 (2013.01); H01L 29/0661 (2013.01); H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 21/02529 (2013.01); H01L 21/76895 (2013.01);
Abstract

A silicon carbide semiconductor device includes a silicon carbide layerof a first conductivity type, a silicon carbide layerof a second conductivity type, a gate trench, a gate electrodeprovided in the gate trench, and a protection trenchformed to a greater depth than the gate trench. A region in the horizontal direction that includes both the gate trenchand a protection trenchthat surrounds only a part of the gate trenchin the horizontal direction is a cell region, and a region in the horizontal direction that includes a protection trenchand in which a gate pador a lead electrode connected to the gate padis disposed is a gate region.


Find Patent Forward Citations

Loading…