The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Nov. 25, 2009
Akihiko Sugai, Hanno, JP;
Yasuyuki Sakaguchi, Chichibu, JP;
Akihiko Sugai, Hanno, JP;
Yasuyuki Sakaguchi, Chichibu, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A method of manufacturing of a semiconductor device () includes: a fine pattern forming step of forming p-type impurity regions () and surface ohmic contact electrodes () using a stepper, after forming an N-type epitaxial layer () on a SiC single-crystal substrate (); a protective film planarizing step of forming a protective film so as to cover the surface ohmic contact electrodes () and performing planarization of the protective film; a substrate thinning step of thinning the SiC single-crystal substrate (); a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode () on the SiC single-crystal substrate (); a surface Schottky contact electrode forming step of forming a Schottky metal portion () connected to the p-type impurity regions () and the surface ohmic contact electrodes (); and a step of forming a surface pad electrode () that covers the Schottky metal portion ().